Selective layers of TiSi2 deposited without substrate consumption in a cold wall LPCVD reactor
- 1 September 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 38 (1-4) , 408-415
- https://doi.org/10.1016/0169-4332(89)90561-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilaneApplied Physics Letters, 1989
- Optimized Deposition Parameters for Low Pressure Chemical Vapor Deposited Titanium SilicideJournal of the Electrochemical Society, 1988
- Limited reaction processing: Silicon epitaxyApplied Physics Letters, 1985
- Fundamentals of Crystal Growth IPublished by Springer Nature ,1979