Electrical properties of ion-implanted polyacetylene films
- 15 June 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (12) , 5487-5488
- https://doi.org/10.1063/1.338244
Abstract
Ion-implantation studies of (CH)x films were carried out with ∼10-keV sodium ions. The temperature dependence of the sheet resistance of the implanted layer exhibited a thermal-activation-type behavior. Its activation energy decreased with increasing the ion dose. A long-term observation of the capacitance-voltage characteristics of an implanted p-n junction showed that a step junction was formed long after implantation as a result of the competition between defects annealing and dopants diffusion. These results ensure that low-energy ion implantation is a useful process for the n-type doping of (CH)x.This publication has 7 references indexed in Scilit:
- Fabrication of a stable p–n junction in a polyacetylene film by ion implantationJournal of the Chemical Society, Chemical Communications, 1985
- Application of ion implantation for doping of polyacetylene filmsApplied Physics Letters, 1984
- Metal - Polyacetylene Schottky Barrier DiodesMolecular Crystals and Liquid Crystals, 1984
- Ion-beam-induced conductivity in polymer filmsJournal of Applied Physics, 1983
- Properties of metal/polyacetylene Schottky barriersJournal of Applied Physics, 1981
- Ion implantation studies of (SN)x and (CH)xSynthetic Metals, 1980
- Electrical conductivity of SbF5 doped polyacetyleneJournal de Physique Lettres, 1980