Polaron aspects of generalized Haynes' rules

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Abstract
Impurity energy levels are known to depend on the special chemical nature of the defects which are present in the crystal (chemical shift). In many semiconductors these chemical shifts give rise to linear relations for the energy lines analogous to Haynes' rule. We present a model calculation including electron-phonon coupling, which reproduces the observed relations in CdS and ZnSe quantitatively, and which is able to predict equivalent data for shallow donors in other semiconductors.