Cu(In1-xGax)S2 Thin-Film Solar Cells with Efficiency above 12%, Fabricated by Sulfurization
- 1 July 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (7A) , L748
- https://doi.org/10.1143/jjap.38.l748
Abstract
An efficient thin-film photovoltaic cell has been fabricated using a heterostructure consisting of a Cu(In1-x Ga x )S2 absorber layer obtained by sulfurization of a Cu–In–GaS precursor, a chemical-bath-deposited CdS buffer layer and an rf-magnetron sputtered In2O3 window layer. The growth of hillocks was observed on the surface of the absorber layer when the precursor was heated to the sulfurization temperature (550°C) at the rate of 7°C/min. According to energy-dispersive X-ray analysis, the hillocks, which cause the deterioration of cell performance, are composed of an indium-rich compound. Their growth could be prevented if the heating rate were greatly increased, particularly in a temperature range between 300°C and 550°C, using a rapid thermal process. A conversion efficiency of up to 12.3% has been achieved with a hillock-free Cu(In1-x Ga x )S2 thin film.Keywords
This publication has 2 references indexed in Scilit:
- Cu(In1-xGax)S2 Thin Films Prepared by Sulfurization of Precursors Consisting of Metallic and Gallium Sulfide LayersJapanese Journal of Applied Physics, 1998
- In2O3/CdS/CuInS2 Thin-Film Solar Cell with 9.7% EfficiencyJapanese Journal of Applied Physics, 1994