Erratum: ‘‘Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy’’ [J. Appl. Phys. 5 7, 249 (1985)]
- 1 August 1986
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (3) , 1238
- https://doi.org/10.1063/1.337803
Abstract
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