Electronic structure of metal hydrides. V. x-dependent properties of LaHx (1.9<~x<~2.9) and NdHx (2.01<~x<~2.27)

Abstract
The composition-dependent electronic structure of fcc LaHx, 1.9<~x<~2.9, has been studied using photoelectron spectroscopy with synchrotron radiation (10<~hv<~50 eV). Complementary optical reflectance measurements (0.16<~hv<~4 eV) have been performed for fcc LaHx, 1.9<~x<~2.9, and NdHx, 2.01<~x<~2.27. For LaHx, x2, the occupied d bands are ∼1.5 eV wide and the hydrogen-induced bonding band is centered ∼5 eV below the Fermi level, EF (full width ∼6 eV). Hydrogen occupation of both octahedral and tetrahedral sites is revealed for x<~2, analogous to what has been observed for other metal dihydrides. With increasing hydrogen concentration, emission from the d bands near EF decreases and the bonding band shifts to higher binding energy; the optical spectra show a red shift of interband absorption features, increased octahedral site occupation, and increased screening of a low-energy plasmon. For LaHx samples at the upper end of the composition range, x2.9, the photoemission spectra show very weak valence-band emission, and the optical spectra suggest semiconducting behavior. The binding energies of the 5p12,32 cores, EB, measured relative to EF are shown to increase with x (the total shift is ∼0.8 eV for La → LaH2 and 0.9 eV for LaH2 → LaH3). Our results are compared to band calculations by Gupta and Burger and by Misemer and Harmon and to results of NMR, specific heat, and resistivity studies.