Stress Distribution and Critical Thicknesses of Thin Epitaxial Films
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures [Appl. Phys. Lett. 4 7, 322 (1985)]Applied Physics Letters, 1986
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Behavior of finite two-phase bodies in response to internal and external stresses II. Numerical considerationsMaterials Science and Engineering, 1979
- Surface dislocation model of a finite stressed solidMaterials Science and Engineering, 1979
- Use of misfit strain to remove dislocations from epitaxial thin filmsThin Solid Films, 1976
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970
- Crystal Interfaces. Part II. Finite OvergrowthsJournal of Applied Physics, 1963