Effects of interfacial Oxide layer on short-channel polycrystalline source and drain MOSFET's

1 April 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (4) , 165-167
https://doi.org/10.1109/edl.1987.26589

Abstract

Using a novel self-alignment approach, the characteristics of polycrystalline source and drain MOSFET's with and without a deliberately grown oxide under the polycrystalline regions are compared. The interfacial oxide is shown to suppress short-channel effects in the shortest channel devices studied, but this improvement is at the expense of increased source-to-drain contact resistance in the present devices. The devices without the interfacial oxide are also expected to have superior hot-carrier performance.

Keywords

ELECTRODES
TUNNELING
AUSTRALIA
MICROELECTRONICS
CONTACT RESISTANCE
HOT CARRIERS
INSULATION
COMPUTATIONAL INTELLIGENCE SOCIETY
DRY ETCHING

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