Switching asymmetries in closely coupled magnetic nanostructure arrays
- 25 October 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (17) , 2641-2643
- https://doi.org/10.1063/1.125104
Abstract
Cobalt nanostructures (220 and 300 nm×275 nm×30 nm) were fabricated using electron beam lithography into ordered, close proximity (170 nm) arrays. Domain configurations with accompanying hysteresis loops were measured using off-axis electron holography. Measurements were compared to solutions of the Landau–Lifshitz–Gilbert equations. Both exhibit switching asymmetries due to strong intercell coupling and the presence of a field normal to the cell surface. Magnetic domain configurations during switching depended strongly on the initial conditions, as well as the direction of the perpendicular field relative to the in-plane hysteresis-field direction.Keywords
This publication has 14 references indexed in Scilit:
- Magnetization vortices and anomalous switching in patterned NiFeCo submicron arraysApplied Physics Letters, 1999
- Studies of ZnSe-based semiconductor thin films using grazing incidence x-ray scattering and diffractionJournal of Applied Physics, 1999
- End domain states and magnetization reversal in submicron magnetic structuresIEEE Transactions on Magnetics, 1998
- Reorientational magnetic transition in nanostructured epitaxial cobalt patches (abstract)Journal of Applied Physics, 1997
- Magnetic tunnel junctions fabricated at tenth-micron dimensions by electron beam lithographyMicroelectronic Engineering, 1997
- Imaging and magnetometry of switching in nanometer-scale iron particlesApplied Physics Letters, 1996
- Switching characteristics of submicron cobalt islandsJournal of Applied Physics, 1996
- Growth of High Aspect Ratio Nanometer-Scale Magnets with Chemical Vapor Deposition and Scanning Tunneling MicroscopyScience, 1993
- Electron-holographic interference microscopyAdvances in Physics, 1992
- Micromagnetics of domain walls at surfacesPhysical Review B, 1991