Relation between growth conditions and reconstruction on InAs during molecular beam epitaxy using an As2 source
- 15 June 1984
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (12) , 4239-4243
- https://doi.org/10.1063/1.333025
Abstract
We have studied the growth of InAs by molecular beam epitaxy using an As2 source and have determined the growth conditions at which the surface changes from arsenic stable to indium stable. We conclude that the governing parameter is not the flux ratio, but rather the flux difference, i.e., the absolute amount of excess arsenic supplied. We propose a model to explain this behavior.This publication has 6 references indexed in Scilit:
- Nucleation and strain relaxation at the InAs/GaAs(100) heterojunctionJournal of Vacuum Science & Technology B, 1983
- Theory of polar semiconductor surfacesJournal of Vacuum Science and Technology, 1979
- Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AESSurface Science, 1978
- Thin InAs epitaxial layers grown on (100) GaAs substrates by molecular beam depositionApplied Physics Letters, 1978
- Molecular Beam Epitaxial Growth of InAsJapanese Journal of Applied Physics, 1977
- Die thermodynamischen daten und dampfdrucke der wichtigsten III-V-VerbindungenSolid-State Electronics, 1960