Growth of Dislocation-Free Undoped InP Crystals
- 1 June 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (6) , L331
- https://doi.org/10.1143/jjap.19.l331
Abstract
Dislocation-free undoped InP crystals were grown by the liquid encapsulation Czochralski method by means of a necking-in procedure. A low temperature gradient near the solid-liquid interface was essential for growth, and a temperature gradient of 55°C/cm enabled the growth of a dislocation-free crystal in a pulling of the P direction up to a diameter of 15 mm. No etch pits (either D- or S-pit) were observed on the etched surfaces of wafers cut from each position of the crystal. This suggests the absence of microdefects in the crystal.Keywords
This publication has 3 references indexed in Scilit:
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978
- Growth of dislocation-free gallium-phosphide crystals from a stoichiometric meltJournal of Crystal Growth, 1977
- Impurity effect on the growth of dislocation-free InP single crystalsJournal of Applied Physics, 1976