Electromigration Study of the Al-Cu/Ti/Al-Cu System

• 1 April 1984
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/irps.1984.362058

Abstract

Keywords

• ANNEALING
• CURRENT DENSITY
• ELECTROMIGRATION
• CONDUCTIVITY
• SILICON
• INTERMETALLIC
• SURFACES