Photoelectric properties of Pb1?x?y Sn x Ge y Te:In epitaxial films
- 1 December 1993
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 57 (6) , 567-572
- https://doi.org/10.1007/bf00331760
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Impurity Photoconductivity and Electrical Properties of Pb1−x−yGexSnyTe Doped with IndiumPhysica Status Solidi (a), 1985
- Switching effects in the dielectric phase of the Pb1−xSnxTe (In) compoundsSolid State Communications, 1982