In-plane orientation control of (001)YBa2Cu3O7−δ grown on (001)MgO by pulsed organometallic beam epitaxy
- 20 May 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (21) , 3037-3039
- https://doi.org/10.1063/1.115569
Abstract
Thin films of (001) YBCO are grown on epitaxially polished (001) MgO by pulsed organometallic beam epitaxy. The in‐plane orientation of the film is controlled by the thickness of a BaO layer, grown in situ, prior to the YBCO growth. For thin BaO layers (<≊7×1014 Ba/cm2) the films grown [110]YBCO∥[100]MgO. For thick BaO layers (≳≊11×1014 Ba/cm2) the films grow [100]YBCO∥[100]MgO. A mechanism that relates the change in YBCO in‐plane orientation to a change in the structure of the initial BaO layers with BaO thickness is described.Keywords
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