Thermal conductivity of lateral epitaxial overgrown GaN films
- 27 December 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (26) , 4151-4153
- https://doi.org/10.1063/1.125566
Abstract
The room-temperature thermal conductivity of lateral epitaxial overgrown metalorganic chemical vapor depositionGaNfilms is reported to be in excess of 155 W/m K. This compares with the reported value of 130 W/m K for bulk single crystals and a similar value (135 W/m K) for a thick (∼50 μm) GaNfilmgrown, without a nucleation layer, on sapphire by hydride vapor phase epitaxy. The measurements were made by a third-harmonic electrical measurement.Keywords
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