Characterization of CMOS Devices in 0.5-μm Silicon-On-Sapphire Films Modified by Solid Phase Epitaxy and Regrowth (Spear)
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Crystalline disorder reduction and defect-type change in silicon on sapphire films by silicon implantation and subsequent thermal annealingApplied Physics Letters, 1980
- Mechanical and electrical properties of epitaxial silicon films on spinelSolid-State Electronics, 1968