InGaAs/InP-Photodiodes with dark current limited by generation-recombination
- 31 January 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (3) , 235-237
- https://doi.org/10.1049/el:19910152
Abstract
From I(V) and C(V) measurements the conclusion is made that among the sources of dark current in InGaAs/lnP diodes, generation-recombination current dominates. Four different contributions to the dark from material layers have been identified. The highest generation rate was observed in the InP buffer layer. Various traps causing the dark current in these different layers have also been identified.Keywords
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