Macrospin in ferromagnetic nanojunctions
- 1 December 2008
- journal article
- Published by Pleiades Publishing Ltd in Journal of Experimental and Theoretical Physics
- Vol. 107 (6) , 1027-1038
- https://doi.org/10.1134/s1063776108120121
Abstract
We study the passage of transverse current through a ferromagnetic nanojunctions, viz., a layered nanostructure of the spin-valve type containing two ferromagnetic layers separated by a spacer that prevents exchange coupling between the layers in the absence of current, but does not affect spin polarization of the current. The conditions for a high level of injection of spins by current are derived at which the concentration of injected nonequilibrium spins can reach or even exceed their equilibrium concentration. In such conditions, a number of new effects are observed. The threshold of exchange switching by current is lowered by several orders of magnitude due to matching of spin resistances of the layers. The application of an external magnetic field in the vicinity of the orientation phase transition additionally lowers this threshold. This leads to multistability, in which one value of the current corresponds to two (or more) stable noncollinear orientations of magnetization, and switching itself becomes irreversible. A methodical feature of this research is that the calculation is performed in the so-called macrospin approximation, which is in good agreement with most of known experiments. In this approximation, the equations of motion taking into account the torque as well as spin injection are derived for the first time and solved.Keywords
This publication has 12 references indexed in Scilit:
- Disturbance of spin equilibrium by current through the interface of noncollinear ferromagnetsJournal of Magnetism and Magnetic Materials, 2007
- Spin transfer switching in dual MgO magnetic tunnel junctionsApplied Physics Letters, 2007
- Magnetization reversal and current hysteresis due to spin injection in magnetic junctionJournal of Magnetism and Magnetic Materials, 2004
- Switching by point-contact spin injection in a continuous filmApplied Physics Letters, 2004
- Current-driven switching of magnetic layersPhysical Review B, 2001
- Barrier Height and Film Thickness Dependence of the TMRJournal of the Physics Society Japan, 1999
- Current-Induced Switching of Domains in Magnetic Multilayer DevicesScience, 1999
- Emission of spin waves by a magnetic multilayer traversed by a currentPhysical Review B, 1996
- Current-driven excitation of magnetic multilayersJournal of Magnetism and Magnetic Materials, 1996
- Theory of the perpendicular magnetoresistance in magnetic multilayersPhysical Review B, 1993