Effect of compensation on recombination into Si doped (Ga, Al)As

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Abstract
Using a time-resolved cathodoluminescence technique, we have investigated the radiative recombination in highly doped (Ga, Al)As epitaxial layers (the dopant was Si or Ge). We have realized in homogeneous Si-doped epitaxial (Ga, Al)As layers the conditions of large luminescence efficiency and great decay time usually observed in L.E.D. obtained by double liquid phase epitaxy of (Ga, Al)As on GaAs substrate. The phenomena are well explained if we consider the effect of charge impurity fluctuations in compensated semiconductors on the density of state tails at the edges of the band-gap

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