A study of near-micron InP transferred electron devices
- 1 November 1985
- journal article
- Published by Elsevier in Physica B+C
- Vol. 134 (1-3) , 499-501
- https://doi.org/10.1016/0378-4363(85)90394-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A review of the theory and technology for ohmic contacts to group III–V compound semiconductorsSolid-State Electronics, 1975
- Computer simulation of transferred electron devices using the displaced Maxwellian approachIEEE Transactions on Electron Devices, 1974
- The Gunn effect under imperfect cathode boundary conditionsIEEE Transactions on Electron Devices, 1968