Heterostructure bipolar transistor employing carbon-doped base grown with trimethyl-Ga and arsine
- 2 August 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (16) , 1260-1262
- https://doi.org/10.1049/el:19900812
Abstract
The investigation of an AlGaAs/GaAs HBT in in which a heavily carbon doped base is grown by chemical beam epitaxy using trimethyl-Ga is reported. A planar technique which reduces surface recombination has been employed for selectively contacting the base region. A base width of 1000 Å and a high doping level of 7 × 1019cm−3 is used. The sheet resistance of the base is less than 100Ω/□. This transistor has a maximum current gain of 25 at a current density of 1.3 × 103A/cm2.This publication has 0 references indexed in Scilit: