An integrated circuit technique for saturation control of switching transistors

1 September 1968

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits

Vol. 3 (3) , 267-270
https://doi.org/10.1109/jssc.1968.1049898

Abstract

A limited-saturation device technique found to improve the absolute value, spread, and temperature dependence of storage times in integrated transistors, and compatible to existing integrated-circuit processing is described.

Keywords

SWITCHING CIRCUITS
COMMUNICATION SWITCHING
SILICON
RESISTORS
ELECTRON DEVICES
COMMUNICATION SYSTEM CONTROL
DELAY
CURRENT SUPPLIES
TEMPERATURE

This publication has 1 reference indexed in Scilit:

A novel method for selective storage time control in saturating integrated circuitry
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1965