VACUUM DEPOSITION OF AlN ACOUSTIC TRANSDUCERS
- 15 October 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (8) , 286-288
- https://doi.org/10.1063/1.1652613
Abstract
Thin‐film microwave acoustic transducers of piezoelectric aluminum nitride (AlN) have been vacuum deposited by two methods. Aluminum nitride was deposited on metallic film substrates at 300°–1200°C by evaporating aluminum in the presence of either nitrogen gas dissociated in an ac discharge or in the presence of ammonia gas. Longitudinal ultrasonic waves were generated in a sapphire rod with a one‐way‐tuned conversion loss of 10 dB at 1700 MHz.Keywords
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