The influence of high uniaxial stress on the indirect absorption edge in silicon
- 31 August 1965
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 3 (8) , 213-218
- https://doi.org/10.1016/0038-1098(65)90294-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- High-Stress Piezoresistance and Mobility in Degenerate Sb-Doped GermaniumPhysical Review B, 1965
- Piezoresistance and Piezo-Hall-Effect in-Type SiliconPhysical Review B, 1963
- Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation PotentialsPhysical Review B, 1963
- Theory of Cyclotron Resonance in Strained Silicon CrystalsPhysical Review B, 1963
- Direct Transition Exciton and Fine Structure of the Magneto-Absorption Spectrum in GermaniumPhysical Review B, 1958
- Fine Structure in the Absorption-Edge Spectrum of GePhysical Review B, 1957
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1957
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956
- Measurement of Elastic Constants at Low Temperatures by Means of Ultrasonic Waves–Data for Silicon and Germanium Single Crystals, and for Fused SilicaJournal of Applied Physics, 1953