Thermal properties of buried-heterostructure laser diodes

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Abstract
In the present paper, the two-dimensional model of the heat spreading process in buried-heterostructure laser diodes is presented. We consider all heat sources in the structure. A main heat source is connected with nonradiative recombination and is located in the active region. In a lower part of the substrate and at a semiconductor/lower-contact interface, heat is produced by an absorption of the spontaneous radiation transferred from the active region through the passive layers. In all the layers, heat is generated by Joule heating. For every heat source, the electric analogue model of the heat-flux spreading process is used to define that part of its heat flux which is flowing along the diode axis and is reaching the heat sink directly through the stripe contact. It enables us to determine the approximate axial temperature distribution. This is achieved for the simplified one-dimensional heat flow by means of the Fourier series method. To reduce the nonlinear thermal-conduction equation to its linear form, the space transformation and the temperature transformation are used. The exact axial temperature distribution as well as the approximate temperature profiles in the centres of the layers are calculated by means of a self-consistent method using the above mentioned electric analogue model. In this calculation, the approximate axial temperature distribution is treated as the first approximation of the boundary condition.

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