Au-Free Epitaxial Growth of InAs Nanowires
- 13 July 2006
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 6 (8) , 1817-1821
- https://doi.org/10.1021/nl060452v
Abstract
III−V nanowires have been fabricated by metal−organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III−V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.Keywords
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