Photoconductivity of lightly boron doped a-Si:H
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 627-630
- https://doi.org/10.1016/0022-3093(85)90736-7
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Temperature dependence of electron-capture cross section of localized states inPhysical Review B, 1983
- Identification of the Dangling-Bond State within the Mobility Gap of-Si: H by Depletion-Width-Modulated ESR SpectroscopyPhysical Review Letters, 1982
- Photoconductivity and recombination in doped amorphous siliconPhilosophical Magazine, 1977