Characteristics of floating gate device as analogue memory for neural networks

23 May 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (11) , 924-926
https://doi.org/10.1049/el:19910578

Abstract

An effective controlling circuit for a floating-gate MOSFET analogue memory used in neural networks is described. It is possible to charge or discharge the floating gate storage with high resolution of more than 1% of full scale. The experimental results are described and discussed. An improved device structure is proposed for simplifying the controlling circuit.

Keywords

FLOATING GATE DEVICE
NEURAL NETWORKS
ANALOGUE MEMORY
CONTROLLING CIRCUIT
FLOATING-GATE MOSFET ANALOGUE MEMORY
STORAGE CHARGE
STORAGE DISCHARGE

This publication has 1 reference indexed in Scilit:

An electrically trainable artificial neural network (ETANN) with 10240 'floating gate' synapses
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1989