Radiation hardness of the HERA-B silicon microstrip detectors
- 1 November 1999
- journal article
- research article
- Published by Springer Nature in Il Nuovo Cimento A (1971-1996)
- Vol. 112 (11) , 1383-1389
- https://doi.org/10.1007/bf03185604
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Radiation hardness of silicon detectors – a challenge from high-energy physicsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999
- Carrier lifetimes in heavily irradiated silicon diodesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999
- First experience and results from the HERA-B vertex detector systemNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1998
- Single-sided p+n and double-sided silicon strip detectors exposed to fluences up to 2×1014/cm2 24 GeV protonsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1998
- Radiation damage experience at CDF with SVX′Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996
- Pion and proton induced radiation damage to silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996
- Irradiation tests of double-sided silicon strip detectors with a special guard ring structureIEEE Transactions on Nuclear Science, 1996
- Charge collection in silicon strip detectorsNuclear Instruments and Methods in Physics Research, 1983