AES Sensitivity Factors for the Analysis of Silicon Oxynitrides

1 May 1989

journal article
Published by The Electrochemical Society in Journal of the Electrochemical Society

Vol. 136 (5) , 1508-1511
https://doi.org/10.1149/1.2096952

Abstract

The purpose of this article is to describe a method of obtaining an AES sensitivity factor which represents the overlapping peaks of silicon when a combination of the oxide and the nitride form is present. This technique will improve the accuracy from about 27% to about 5%.

Keywords

SENSITIVITY FACTOR
OVERLAPPING PEAKS
SILICON OXYNITRIDES
ANALYSIS OF SILICON
AES SENSITIVITY

This publication has 0 references indexed in Scilit: