Radiation-induced trapping centers in thin silicon dioxide films
- 1 July 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 40 (1-3) , 31-47
- https://doi.org/10.1016/0022-3093(80)90090-3
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Radiation damage in silicon dioxide films exposed to reactive ion etchingJournal of Applied Physics, 1979
- Electron trapping in SiO2 due to electron-beam deposition of aluminumJournal of Applied Physics, 1978
- Electron trapping in electron-beam irradiated SiO2Journal of Applied Physics, 1978
- Hot-electron emission from silicon into silicon dioxideSolid-State Electronics, 1978
- The Fabrication of Microelectronic CircuitsScientific American, 1977
- Microelectronic Circuit ElementsScientific American, 1977
- Avalanche Injection of Holes into SiO2IEEE Transactions on Nuclear Science, 1977
- Hot-carrier instability in IGFET’sApplied Physics Letters, 1975
- Effects of HCL gettering, CR doping and AL+ implantation on hardened SiO2IEEE Transactions on Nuclear Science, 1974
- Atmos—An electrically reprogrammable read-only memory deviceIEEE Transactions on Electron Devices, 1974