Effect of cooling procedure after annealing on electrical properties of Cd0.2Hg0.8Te epitaxial films grown by liquid phase epitaxy
- 1 September 1995
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (9) , 1113-1117
- https://doi.org/10.1007/bf02653061
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Annealing behavior of undoped Hg0.8Cd0.2Te epitaxial films at low temperaturesJournal of Applied Physics, 1989
- High Quality n-Cd0.2 Hg0.8 Te Grown by Liquid Phase EpitaxyMRS Proceedings, 1987
- Diffusion of gold and mercury self-diffusion in N-type Bridgman-grown Hg1−x CdxTe (x≂0.2)Journal of Vacuum Science & Technology A, 1983
- Effects of annealing on the electrical properties of CdxHg1−xTeJournal of Applied Physics, 1982
- The behaviour of selected impurities in CdxHg1−xTeJournal of Crystal Growth, 1982
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: III . Defect Structure of UndopedJournal of the Electrochemical Society, 1981
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper DopedJournal of the Electrochemical Society, 1981
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: II . Defect Structure of Indium‐DopedJournal of the Electrochemical Society, 1981
- The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4TeJournal of Electronic Materials, 1978
- Electrons and holes in HgTe and Hg0.82Cd0.18Te with controlled deviations from stoichiometryJournal of Physics and Chemistry of Solids, 1976