Disappearance of the Breakdown of Quantum Hall Effects in Short Devices
- 1 August 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (8S) , 4309-4312
- https://doi.org/10.1143/jjap.34.4309
Abstract
Device-length dependence of the breakdown of the integer quantum Hall effects is studied by using devices with narrow constricted regions of different lengths L at T=1.5 – 4.2 K and Landau-level filling factors of ν= 2, 4 and 6. Samples are fabricated from GaAs/AlGaAs heterostructures. Sharp increase in the diagonal resistance R x at a critical current disappears, and is replaced by a continuous and gradual increase in short constricted regions of L < 30 µm. The observed L-dependence supports an avalanche-type carrier multiplication mechanism triggered by electron-superheating.Keywords
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