Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N-n heterojunction by C-V profiling
- 1 July 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (1) , 118-120
- https://doi.org/10.1063/1.94149
Abstract
We report the first measurement of the conduction‐band discontinuity ΔEc for molecular beam epitaxial grown N‐n In0.52Al0.48As/In0.53Ga0.47As heterojunction using the C‐V profiling technique outlined by Kroemer et al. We find ΔEc=(0.50±0.05) eV @297 K corresponding to (71±7)% ΔEg. An interface charge density σi of (4.0±0.8)×1011 cm−2 was also obtained. A knowledge of ΔEc is of importance for quantifying carrier confinement in double heterostructure lasers fabricated from these ternary compounds.Keywords
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