High light output-power single-longitudinal-mode semiconductor laser diodes
- 1 December 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (12) , 2594-2602
- https://doi.org/10.1109/T-ED.1985.22389
Abstract
Issues related to realizing high light output-power single-longitudinal-mode InGaAsP/InP DFB LD's have been studied experimentally and theoretically. Asymmetry in the reflections as the front and rear facets of DFB cavity has been found to result in enhanced single-longitudinal-mode selectivity and higher light output power from the front facet. Single-longitudinal-mode CW light output power as high as 103 mW has been obtained in a 1.3-µm DFB-DC-PBH LD with facet reflectivities of 2 and 80-90 percent. Low internal quantum efficiency is pointed out to bean important problem for 1.5-µLD's.Keywords
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