Negative Differential Mobility in Nonparabolic Bands

1 September 1969

journal article
Published by IBM in IBM Journal of Research and Development

Vol. 13 (5) , 607-610
https://doi.org/10.1147/rd.135.0607

Abstract

A strong NDM (negative differential mobility) in n-InSb at low temperatures is predicted from a single non-parabolic band model. Calculations allowing for the anisotropy of the distribution function have been made using (1) a drifted Maxwellian, and (2) a "two-temperature" model. The calculated NDM threshold field of 550 V/cm is in an observable field range in p-n junctions. In bulk samples, where breakdown occurs at E = 200 V/cm, domain nucleation may take place at high-field inhomogeneities and contribute to the dynamics of the breakdown process and attendant microwave emission.

Keywords

CALCULATED NDM THRESHOLD FIELD
STRONG NDM
SINGLE NON-PARABOLIC BAND MODEL
BREAKDOWN PROCESS
DOMAIN NUCLEATION
BULK SAMPLE
NEGATIVE DIFFERENTIAL MOBILITY
DISTRIBUTION FUNCTION
OBSERVABLE FIELD RANGE
HIGH-FIELD INHOMOGENEITIES
ATTENDANT MICROWAVE EMISSION
NONPARABOLIC BAND

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