Detection of Heat Pulses by the Two-Dimensional Electron Gas in a Silicon Device
- 11 July 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 61 (2) , 180-182
- https://doi.org/10.1103/physrevlett.61.180
Abstract
A silicon metal-oxide semiconductor field-effect transistor has been used to detect heat pulses generated by electrical heating of a thin metal film. In the presence of a quantizing magnetic field deep oscillations in the detected intensity are observed, the signal being a maximum when the Fermi level coincides with a Landau level. The appearance of an intermediate signal at higher heater temperatures is attributed to cyclotron phonon absorption. We show that this system can be used as a tunable phonon spectrometer.Keywords
This publication has 7 references indexed in Scilit:
- Magnetic field dependence of the phonon scattering and phonon emission by a 2DEG in a Si MOSFETSurface Science, 1988
- The Effect of a Magnetic Field on the Phonon Emission from a Hot 2-DEG in the Inversion Layer of a Silicon MOSFETJapanese Journal of Applied Physics, 1987
- Quantum Oscillations in the Phonon Scattering by a 2-DEG of a Si-MOSFETJapanese Journal of Applied Physics, 1987
- Phonon-emission spectroscopy of a two-dimensional electron gasPhysical Review B, 1986
- Absorption of ballistic phonons by the (001) inversion layer of Si: Electron-phonon interaction in two dimensionsPhysical Review B, 1983
- Calculated Temperature Dependence of Mobility in Silicon Inversion LayersPhysical Review Letters, 1980
- Radiation temperature and radiation power of thermal phonon radiators using diamond as transmission mediumJournal of Applied Physics, 1973