Lithiun Driftability and Precipitation in Silicon
- 1 January 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 19 (1) , 323-328
- https://doi.org/10.1109/tns.1972.4326526
Abstract
Lithium mobility and precipitation were correlated with other electrical and IR-optical measurements on dislocation free crystals grown under special conditions in order to avoid vacancy clustering. It is shown that the classical expression of Pell, to derive the oxygen content, is no longer applicable to those crystals. The influence of annealing on the Li diffusion constant shows that vacancy supersaturation poisons these crystals or that the role of the different oxygen-configurations has to be reviewed.Keywords
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