Soi by wafer bonding with spin-on glass as adhesive

2 January 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (1) , 39-40
https://doi.org/10.1049/el:19870029

Abstract

Two silicon wafers were bonded together with spin-on glass as the adhesive. Bonding strength depended heavily on the surface treatment. This was also confirmed by IR reflection measurement. A silicon-on-insulator (SOI) structure was achieved by thinning one of the wafers after the bonding. The resultant 5μm-thick SOI layer was stable at high temperatures and showed no degradation in its electrical characteristics.

Keywords

STABLE AT HIGH TEMPERATURES
ELECTRICAL CHARACTERISTICS
SOG
SOI BY WAFER BONDING
WAFER THINNING
SURFACE TREATMENT
SI ON INSULATOR
SOI LAYER
SPIN-ON GLASS AS ADHESIVE
IR REFLECTION MEASUREMENT
SILICON-ON-INSULATOR

This publication has 0 references indexed in Scilit: