Theory of short-pulse gain saturation in semiconductor laser amplifiers
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (5) , 443-446
- https://doi.org/10.1109/68.136480
Abstract
Carrier heating and spectral hole burning are shown to have a strong influence on the amplification of ultrashort pulses using semiconductor laser amplifiers. Approximate analytical expressions for the effective saturation energy in different pulsewidth regimes are derived.Keywords
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