Mode properties of GaAs-Ga1−xAlxAs heterostructure inverted-ridge optical waveguides
- 1 June 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (11) , 665-667
- https://doi.org/10.1063/1.88614
Abstract
Clean mode excitation and transmission have been observed in inverted‐ridge waveguides fabricated by liquid‐phase epitaxy of Ga0.7Al0.3As‐GaAs structures over preferentially etched channels.Keywords
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