Backside-illuminated InAsSb/GaSb broadband detectors
- 1 May 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (9) , 734-736
- https://doi.org/10.1063/1.91649
Abstract
This letter reports the achievement of a high‐performance, broad‐spectral‐band infrared detector with the InAs1−xSbx alloy system using a backside‐illuminated heterostructure approach. The basic structure of the detector is obtained with InAs1−xSbx grown by a liquid phase epitaxy technique on a GaSb substrate under lattice‐matched or nearly lattice‐matched conditions. The measured photoresponse covers the spectral range 1.7–4.2 μm with an external quantum efficiency of 65% without antireflective coating. The typical zero‐bias resistance area product is in excess of 109 Ω cm2. The typical leakage current desity is less than 10−9 A/cm2 for 100 mV reverse bias. All parameters were measured at 77 K.Keywords
This publication has 4 references indexed in Scilit:
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