Outstanding noise characteristics of SiGe:C HBT allow flexibility in high-frequency RF designs
- 1 October 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Ultra high speed SiGe NPN for advanced BiCMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 0.18 μm SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002