Lifetime measurements of thestate in heliumlike silicon and sulphur
- 1 November 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review A
- Vol. 14 (5) , 1729-1734
- https://doi.org/10.1103/physreva.14.1729
Abstract
We report measurements of the lifetime of the metastable state in heliumlike silicon and sulphur using the time-of-flight technique. An apparatus was developed suitable for direct beam-foil measurement of mean lives of x-ray emitting states whose lifetimes are in the neighborhood of sec. Silicon beams at 48 and 54 MeV and sulphur beams at 50, 60, and 66 MeV underwent foil excitation in passage through a nickel foil. A high-resolution Doppler-tuned spectrometer was used to study the decay profile of the emitted x rays. The measured lifetimes of the state, (6.35 ± 0.33) × sec and (1.57 ± 0.18) × sec for silicon and sulphur, respectively, are in agreement with theory.
Keywords
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