f-αnoise in NbSe3
- 20 December 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (35) , 7157-7164
- https://doi.org/10.1088/0022-3719/15/35/013
Abstract
The authors have measured the voltage noise of NbSe3 samples in the nonlinear state as a function of frequency for temperatures below the lower charge density wave formation temperature. They find that over broad conditions of electric fields and temperatures the noise power spectrum follows a f- alpha dependence with alpha approximately 0.8. They interpret the broad-band noise as due either to the mixing of radiofrequency fields radiated by the domains which form the charge density wave lattice, or alternatively to the dynamics of kinks-antikinks along the chains.Keywords
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