UHV – Deposited Amorphous Tantalum and Tantalum–Nickel Films
Open Access
- 1 January 1977
- journal article
- research article
- Published by Wiley in Active and Passive Electronic Components
- Vol. 4 (1) , 29-35
- https://doi.org/10.1155/apec.4.29
Abstract
Tantalum produced by ultra-high vacuum vapour quenching has been identified on the basis of various forms of evidence as amorphous tantalum. Tantalum in this amorphous form has a resistivity of 230 cm and a temperature coefficient of resistivity (TCR) of –60 ppm/K. The films are stable below –90°C. At higher temperatures the amorphous structure suddenly turns into coarse-grained tantalum.Keywords
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