Schottky barrier height of Au on n -type Ga _{1−
x} Al _x Sb (0.0≤ x ≤0.65)

31 July 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (16) , 626-627
https://doi.org/10.1049/el:19800434

Abstract

The dependence of the barrier height φ_Bn of Au-Ga_1−xAl_xSb Schottky barriers on x, the mole fraction of Al in the solid, has been measured. The data show that as x increases the values of φ_Bn also increase. However, the measured barrier heights do not agree with those predicted by the ‘common anion’ rule. This result, coupled with other available data, indicates that the Au-Ga_1−xAl_xSb hole Schottky barrier height (φ_Bn) is not independent of the Ga/Al cation ratio.

Keywords

AU-GA1-XALXSB SCHOTTKY BARRIER
MOLE FRACTION
BARRIER HEIGHT

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Schottky barrier height of Au on n -type Ga 1− x Al x Sb (0.0≤ x ≤0.65)

Abstract

Keywords

Schottky barrier height of Au on n -type Ga _{1−
x} Al _x Sb (0.0≤ x ≤0.65)