Linear compound FET circuit using gallium arsenide MESFETs
- 1 August 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (16) , 1494-1496
- https://doi.org/10.1049/el:19910935
Abstract
A design for a compound FET using depletion-mode gallium arsenide MESFETs and diodes is presented. The compound FET exhibits a linearised relationship between the drain and source currents and the applied gate-source voltage. Simulations confirm good linearity and frequency characteristics for the compound FET to 10 GHz.Keywords
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