Two-step process for thin films of tin dioxide

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Abstract
A two-step process for deposition of thin films of tin dioxide is described. The first step consists of depositing opaque films of oxygen deficient tin dioxide by dc sputtering of porous targets in an argon atmosphere; the second step is to oxidize the films at 400 °C in air. The target, which is used in this research, contains 80% SnO2 and 20% Sb by weight. Its density is about 60%–70% of the solid density of SnO2. The films have been heated in air at different temperatures. The variations in conductivity, transparency, and thickness with heating temperature and duration are presented. The stability and annealing behavior of the films are discussed. It seems possible to control the film conductivity by controlling heating time. The films, at the end of 6 h of heating at 400 °C in air, have conductivity of about 2Ω−1 cm−1 and transparency of about 80%.
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