Use of resonance ionization microprobe analysis for characterization of ultrashallow doping profiles in semiconductors
- 1 January 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (1) , 294-300
- https://doi.org/10.1116/1.588464
Abstract
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